The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jun. 05, 2007
Koji Yoshida, Toyama, JP;
Masataka Kusumi, Osaka, JP;
Hiroaki Kuriyama, Kyoto, JP;
Fumihiko Noro, Toyama, JP;
Nobuyoshi Takahashi, Toyama, JP;
Koji Yoshida, Toyama, JP;
Masataka Kusumi, Osaka, JP;
Hiroaki Kuriyama, Kyoto, JP;
Fumihiko Noro, Toyama, JP;
Nobuyoshi Takahashi, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: source/drain regions formed in a semiconductor substrate; a trapping film for storing information by accumulating charges, the trapping film being formed in a region on the semiconductor substrate which includes a region on a channel region between the source/drain regions; and gate electrodes formed on the trapping film. A silicon nitride film containing carbon is formed by low pressure CVD using an organic material so as to cover the gate electrodes and a part of the trapping film which is located between adjacent gate electrodes.