The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Nov. 21, 2006
Joo-byoung Yoon, Gyeonggi-do, KR;
Jin-sung Kim, Gyeonggi-do, KR;
Kyung-woo Lee, Gyeonggi-do, KR;
Yeong-cheol Lee, Seoul, KR;
Sang-jun Park, Gyeonggi-do, KR;
Hye-sun Kim, Gyeonggi-do, KR;
Joo-Byoung Yoon, Gyeonggi-do, KR;
Jin-Sung Kim, Gyeonggi-do, KR;
Kyung-Woo Lee, Gyeonggi-do, KR;
Yeong-Cheol Lee, Seoul, KR;
Sang-Jun Park, Gyeonggi-do, KR;
Hye-Sun Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.