The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jan. 12, 2007
LI Jiang, Shanghai, CN;
Ying Shao, Shanghai, CN;
Libbert Peng, Shanghai, CN;
Auter Wu, Shanghai, CN;
Li Jiang, Shanghai, CN;
Ying Shao, Shanghai, CN;
Libbert Peng, Shanghai, CN;
Auter Wu, Shanghai, CN;
Abstract
A method for processing semiconductor devices includes providing a semiconductor substrate. The method includes forming a pad oxide layer overlying the substrate and forming a silicon nitride layer overlying the pad oxide layer. The method includes forming a trench region extending through an entirety of a portion of the silicon nitride layer and extends into a depth of the semiconductor substrate. The method also includes filling the trench region with an oxide material. The oxide material extends from a bottom portion of the trench region to an upper surface of the silicon nitride layer. The method includes planarizing the oxide material and selectively removing the silicon nitride layer to form an isolation structure. A polysilicon material is deposited overlying the isolation structure. The polysilicon material is planarized to expose a top portion of the isolation structure and form a first electrode and a second electrode structures separated by a portion of the isolation structure.