The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Mar. 21, 2008
Kan Takada, Kawasaki, JP;
Mitsuru Ekawa, Kawasaki, JP;
Tsuyoshi Yamamoto, Kawasaki, JP;
Tatsuya Takeuchi, Yamanashi, JP;
Kan Takada, Kawasaki, JP;
Mitsuru Ekawa, Kawasaki, JP;
Tsuyoshi Yamamoto, Kawasaki, JP;
Tatsuya Takeuchi, Yamanashi, JP;
Fujitsu Limited, Kawasaki, JP;
Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;
Abstract
In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×10cmand the Fe concentration is 1.8×10cm. In a semi-insulating burying layer, Fe is doped as an impurity generating a deep acceptor level and the concentration thereof is 6.0×10cm. The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer.