The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7804870 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 28, 2010

Filed:

Mar. 21, 2008
Applicants:

Kan Takada, Kawasaki, JP;

Mitsuru Ekawa, Kawasaki, JP;

Tsuyoshi Yamamoto, Kawasaki, JP;

Tatsuya Takeuchi, Yamanashi, JP;

Inventors:

Kan Takada, Kawasaki, JP;

Mitsuru Ekawa, Kawasaki, JP;

Tsuyoshi Yamamoto, Kawasaki, JP;

Tatsuya Takeuchi, Yamanashi, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×10cmand the Fe concentration is 1.8×10cm. In a semi-insulating burying layer, Fe is doped as an impurity generating a deep acceptor level and the concentration thereof is 6.0×10cm. The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer.


Find Patent Forward Citations

Takada, Kan. (2010). Semiconductor optical device and manufacturing method thereof (U.S. Patent No. 7804870). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7804870

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