The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Apr. 10, 2007
Yuichi Hirano, Tokyo, JP;
Yuichi Hirano, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A gate electrode is provided such that both ends thereof in a gate width direction are projected from an active region in plane view. Partial trench isolation insulation films are provided in a surface of an SOI substrate corresponding to lower parts of the both ends, and body contact regions are provided in the surface of the SOI substrate outside the both ends of the gate electrode in the gate width direction so as to be adjacent to the respective partial trench isolation insulation films. The body contact region and a body region are electrically connected through an SOI layer (well region) under the partial trench isolation insulation film. In addition, a source tie region in which P type impurity is doped in a relatively high concentration is provided in the surface of a source region in the vicinity of the center of the gate electrode in the gate width direction.