The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Mar. 19, 2008
Hiroyasu Kaga, Mito, JP;
Yuichi Madokoro, Hitachinaka, JP;
Shigeru Izawa, Mito, JP;
Tohru Ishitani, Hitachinaka, JP;
Kaoru Umemura, Tokyo, JP;
Hiroyasu Kaga, Mito, JP;
Yuichi Madokoro, Hitachinaka, JP;
Shigeru Izawa, Mito, JP;
Tohru Ishitani, Hitachinaka, JP;
Kaoru Umemura, Tokyo, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.