The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Dec. 26, 2007
Shian-jyh Lin, Taipei County, TW;
Shun-fu Chen, Taipei County, TW;
Tse-chuan Kuo, Taipei, TW;
An-hsiung Liu, Taoyuan County, TW;
Shian-Jyh Lin, Taipei County, TW;
Shun-Fu Chen, Taipei County, TW;
Tse-Chuan Kuo, Taipei, TW;
An-Hsiung Liu, Taoyuan County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method for fabricating the semiconductor device comprises providing a semiconductor substrate having a device region and a testkey region. A first trench is formed in the device region and a second trench is formed in the testkey region. A conductive layer with a first etching selectivity is formed in the first and second trenches. A first implantation process is performed in a first direction to form a first doped region with a first impurity and an undoped region in the conductive layer simultaneously and respectively in the device region and in the testkey region. A second implantation process is performed in the second trench to form a second doped region with a second impurity in the conductive layer, wherein the conductive layer in the second trench has a second etching selectivity higher than the first etching selectivity.