The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Sep. 27, 2007
Jin-il Lee, Sungnam, KR;
Sung-lae Cho, Yongin, KR;
Hye-young Park, Seongnam-si, KR;
Byoung-jae Bae, Hwaseong, KR;
Young-lim Park, Anyang, KR;
Jin-il Lee, Sungnam, KR;
Sung-lae Cho, Yongin, KR;
Hye-young Park, Seongnam-si, KR;
Byoung-Jae Bae, Hwaseong, KR;
Young-Lim Park, Anyang, KR;
Abstract
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. Formation of an integrated circuit memory cell include forming a first electrode on a substrate. An insulation layer is formed on the substrate with an opening that exposes at least a portion of a first electrode. An amorphous variable resistivity material is formed on the first electrode and extends away from the first electrode along sidewalls of the opening. A crystalline variable resistivity material is formed in the opening on the amorphous variable resistivity material. A second electrode is formed on the crystalline variable resistivity material.