The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7803505 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 28, 2010

Filed:

Dec. 04, 2007
Applicant:

Sung Hyun OH, Cheongju-si, KR;

Inventor:

Sung Hyun Oh, Cheongju-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method of fabricating a mask for a semiconductor device, a phase shift layer and a light blocking layer are formed on a transparent substrate. The light blocking layer is patterned to form light blocking patterns which partially expose a surface of the phase shift layer. An extension defect or a bridge defect is detected. A photoresist layer, which does not react to light, is formed on a resulting structure including the detected defect. The extension defect is removed by performing a repair process on the light blocking patterns. The bridge defect is removed by etching using the light blocking patterns as a mask.


Find Patent Forward Citations

Oh, Sung. (2010). Method of fabricating a mask for a semiconductor device (U.S. Patent No. 7803505). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7803505

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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