The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Aug. 17, 2007
Ravi Annavajjhala, Folsom, CA (US);
Brian A. Dargel, Folsom, CA (US);
Hiroyuki Kuwahara, Yokohama, JP;
Touhid M. Raza, Cordova, CA (US);
Ravi Annavajjhala, Folsom, CA (US);
Brian A. Dargel, Folsom, CA (US);
Hiroyuki Kuwahara, Yokohama, JP;
Touhid M. Raza, Cordova, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A novel technique to improve and extend endurance and reliability of a memory device utilizing multi-level cells is disclosed. As a memory device ages, it's reliability deteriorates. Prior to the memory device becoming completely unreliable, the memory device transitions from a multi-level cell operating mode to a reduced capacity operating mode. When operating in the multi-level cell mode, the memory system stores multiple bits per cell. The memory system stores fewer bits per cell when operating in the reduced capacity. The transition between modes is achieved by setting all bits of a particular memory page to a specific value, for example, either a logic '1' or a logic '0.'