The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7800668 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 21, 2010

Filed:

Dec. 06, 2006
Applicants:

Hiroaki Ohkubo, Kanagawa, JP;

Yasutaka Nakashiba, Kanagawa, JP;

Inventors:

Hiroaki Ohkubo, Kanagawa, JP;

Yasutaka Nakashiba, Kanagawa, JP;

Assignee:

NEC Electronics Corporation, Kawasaki, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a conventional solid state imaging device, there is a room for improvement in sensitivity. In order to solve the problem, a solid state imaging device includes a semiconductor substrate and a light receiving portion. The light receiving portion is provided adjacent to a surface layer on the surface (a first surface) side of the semiconductor substrate. The surface of the light receiving portion is silicided. The solid state imaging device is one in which light from an object to be imaged incident on the back side (a second surface) of the semiconductor substrate is photoelectric-converted inside the semiconductor substrate, the light receiving portion receives electric charge generated by the photoelectric conversion, and the above mentioned object to be imaged is imaged.


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