The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2010

Filed:

Jan. 31, 2008
Applicants:

Hormazdyar Minocher Dalal, LaGrangeville, NY (US);

Jagdish Prasad, Pocatello, ID (US);

Hocine Bouzid Ziad, Kortrijk, BE;

Inventors:

Hormazdyar Minocher Dalal, LaGrangeville, NY (US);

Jagdish Prasad, Pocatello, ID (US);

Hocine Bouzid Ziad, Kortrijk, BE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.


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