The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Mar. 14, 2008
Kazuyuki Nakanishi, Osaka, JP;
Hidetoshi Nishimura, Osaka, JP;
Tomoaki Ikegami, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor integrated circuit is provided which entails no increase in the correction time of OPC and in which non-uniformity in the gate lengths due to the optical proximity effects is surely suppressed. A plurality of standard cells (C, C, C, . . . ), each including gates G extended in the vertical direction, are aligned in the transverse direction to form a standard cell row. A plurality of the standard cell rows are located side by side in the vertical direction to form a standard cell group. Each of the standard cell rows has a terminal standard cell Ce at least one end of the standard cell row. The terminal standard cell Ce includes two or more supplementary gates, each of which is any of a dummy gate and a gate of an inactive transistor.