The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Jul. 27, 2009
Nicholas A. Doudoumopoulos, Garrett Park, MD (US);
C. Paul Christensen, Tracys Landing, MD (US);
Paul Wickboldt, Walnut Creek, CA (US);
Nicholas A. Doudoumopoulos, Garrett Park, MD (US);
C. Paul Christensen, Tracys Landing, MD (US);
Paul Wickboldt, Walnut Creek, CA (US);
Potomac Photonics, Inc., Lanham, MD (US);
Abstract
A method utilizing spatially selective laser doping for irradiating predetermined portions of a substrate of a semiconductor material is disclosed. Dopants are deposited onto the surface of a substrate. A pulsed, visible beam is directed to and preferentially absorbed by the substrate only in those regions requiring doping. Spatial modes of the incoherent beam are overlapped and averaged, providing uniform irradiation requiring fewer laser shots. The beam is then focused to the predetermined locations of the substrate for implantation or activation of the dopants. The method provides for scanning and focusing of the beam across the substrate surface, and irradiation of multiple locations using a plurality of beams. The spatial selectivity, combined with visible laser wavelengths, provides greater efficiency in doping only desired substrate regions, while reducing the amount of irradiation required. Savings in cost and manufacturing throughput can be achieved, particularly with respect to doping poly-crystalline silicon.