The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Jul. 25, 2008
Heng-yuan Lee, Tainan County, TW;
Ching-chiun Wang, Miaoli County, TW;
Tai-yuan Wu, Taipei, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
A method for forming a capacitor in a dynamic random access memory, comprising steps of: providing a semiconductor substrate having at least a transistor, whereon an interlayer dielectric layer having at least a first plug is formed so that the first plug is connected to the drain of the transistor; depositing an etching stop layer on the first plug and the interlayer dielectric layer; depositing a first insulating layer on the etching stop layer; forming at least a second plug on the first insulating layer and the etching stop layer so that the second plug is connected to the first plug; depositing a second insulating layer on the first insulating layer and the second plug; forming at least a mold cavity in the second insulating layer so that the aperture of the mold cavity is larger than the diameter of the second plug and there is a deviation between the mold cavity and the second plug; removing the first insulating layer in the mold cavity until the etching stop layer; depositing a first electrode layer to cover the second insulating layer, a sidewall portion of the mold cavity, the second plug and the etching stop layer; removing the second insulating layer so that the first electrode layer forms a single open-ended cavity; and depositing a dielectric layer and a second electrode layer.