The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Sep. 28, 2006
Applicants:
John M. Parsey, Jr., Phoenix, AZ (US);
Gordon M. Grivna, Mesa, AZ (US);
Shanghui L. Tu, Phoenix, AZ (US);
Inventors:
John M. Parsey, Jr., Phoenix, AZ (US);
Gordon M. Grivna, Mesa, AZ (US);
Shanghui L. Tu, Phoenix, AZ (US);
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In one embodiment, a method of forming a semiconductor device with trench charge compensation structures includes exposing the trench sidewalls to a reduced temperature hydrogen desorption process to enhance the formation of monocrystalline semiconductor layers.
Parsey, Jr., John. (2010). Method of forming a semiconductor device having trench charge compensation regions (U.S. Patent No. 7799640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7799640
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile