The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Jun. 15, 2005
Mitsuru Sawamura, Futtsu, JP;
Tatsuo Fujimoto, Futtsu, JP;
Noboru Ohtani, Futtsu, JP;
Masashi Nakabayashi, Futtsu, JP;
Mitsuru Sawamura, Futtsu, JP;
Tatsuo Fujimoto, Futtsu, JP;
Noboru Ohtani, Futtsu, JP;
Masashi Nakabayashi, Futtsu, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×10Ωcm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×10Ωcm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×10Ωcm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom. According to the present invention, by having vacancy clusters including vacancy pairs, the electrical conductivity can be reduced even when the nitrogen concentration is higher than the boron concentration and, in addition, a semi-insulating SiC single crystal resistant to change of the electrical conductivity even with heat treatment can be obtained.