The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2010

Filed:

Jun. 22, 2007
Applicant:

Cheng-ming Yih, Hsinchu, TW;

Inventor:

Cheng-Ming Yih, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory comprising a substrate, a stacked structure over the substrate, a source, a drain and a source-side spacer is provided. The stacked structure includes a tunneling oxide layer, a floating gate on the tunneling oxide layer, an inter-gate dielectric layer on the floating gate and a control gate on the inter-gate dielectric layer. The source and the drain are disposed in the substrate on the sides of the floating gate, respectively. The source-side spacer is disposed on a sidewall of the stacked structure near the source, thereby preventing the tunneling oxide layer and the inter-gate dielectric layer near the source from being re-oxidized, resulting in an increased thickness.


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