The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Apr. 13, 2006
James S. Speck, Goleta, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
P. Morgan Pattison, Morgantown, WV (US);
Troy J. Baker, Santa Barbara, CA (US);
James S. Speck, Goleta, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
P. Morgan Pattison, Morgantown, WV (US);
Troy J. Baker, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Japan Science and Technology Agency, Kawaguchi, Saitama, Prefecture, unknown;
Abstract
An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.