The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Feb. 13, 2009
Hugh J. Griffin, Newtownabbey, GB;
Takeshi Ishiguro, Aizuwakamatsu, JP;
Kenji Sugiura, Kawasaki, JP;
Hugh J. Griffin, Newtownabbey, GB;
Takeshi Ishiguro, Aizuwakamatsu, JP;
Kenji Sugiura, Kawasaki, JP;
Icemos Technology Ltd., Belfast, GB;
Abstract
A method of manufacturing a semiconductor wafer having at least one device trench extending to a first depth position includes providing a semiconductor substrate having first and second main surfaces and a semiconductor material layer having first and second main surfaces disposed on the first main surface of the semiconductor substrate and determining an etch ratio. The least one device trench and at least one monitor trench are simultaneously formed in the first main surface of the semiconductor material layer. The at least one monitor trench is monitored to detect when it extends to a second depth position. A ratio of the first depth position to the second depth position is generally equal to the etch ratio.