The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Dec. 27, 2004
Masashi Nakabayashi, Futtsu, JP;
Tatsuo Fujimoto, Futtsu, JP;
Mitsuru Sawamura, Futtsu, JP;
Noboru Ohtani, Futtsu, JP;
Masashi Nakabayashi, Futtsu, JP;
Tatsuo Fujimoto, Futtsu, JP;
Mitsuru Sawamura, Futtsu, JP;
Noboru Ohtani, Futtsu, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1 ×10/cmor more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×10Ωcm or more, and a method of production of a silicon carbide single crystal.