The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Sep. 25, 2007
Phase-change material layer and phase-change memory device including the phase-change material layer
Bong-jin Kuh, Gyeonggi-do, KR;
Yong-ho Ha, Gyeonggi-do, KR;
Han-bong Ko, Gyeonggi-do, KR;
Doo-hwan Park, Gyeonggi-do, KR;
Hee-ju Shin, Gyeonggi-do, KR;
Sang-wook Lim, Gyeonggi-do, KR;
Bong-Jin Kuh, Gyeonggi-do, KR;
Yong-Ho Ha, Gyeonggi-do, KR;
Han-Bong Ko, Gyeonggi-do, KR;
Doo-Hwan Park, Gyeonggi-do, KR;
Hee-Ju Shin, Gyeonggi-do, KR;
Sang-Wook Lim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A phase-change memory device includes a substrate having a contact region, an insulating interlayer on the substrate, a lower electrode electrically connected to the contact region, a phase-change material layer pattern formed on the lower electrode, and an upper electrode formed on the phase-change material layer pattern. The phase-change material layer pattern includes a chalcogenide compound doped with carbon and at least one of nitrogen and metal. The phase-change memory device may have a considerably reduced driving current without increasing a set resistance thereof. Further, the phase-change material layer pattern may have an increased crystallization temperature so as to ensure improved data retention characteristics of the phase-change memory device.