The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Sep. 12, 2007
Applicants:
Kazutaka Manabe, Tokyo, JP;
Eiji Kitamura, Tokyo, JP;
Inventors:
Kazutaka Manabe, Tokyo, JP;
Eiji Kitamura, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 21/336 (2006.01); H01L 21/38 (2006.01); H01L 21/22 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device forms an Ndiffusion layer to be a source/drain region of a grooved transistor simultaneously with an Ndiffusion layer of a channel region directly under a gate electrode of an antifuse element. The formation of the Ndiffusion layer directly under the gate electrode of the antifuse element stabilizes electrical connection between the gate electrode and the source/drain diffusion region even during writing with a low write voltage.