The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
May. 07, 2008
Li-heng Chou, Portland, ME (US);
Jiankang Bu, Windham, ME (US);
Li-Heng Chou, Portland, ME (US);
Jiankang Bu, Windham, ME (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A method includes forming a release layer of a semiconductor device being fabricated, where the release layer has a trapezoidal shape. The method also includes forming a cantilever, which has a cantilever arm formed over the release layer. The method further includes removing at least part of the release layer from under the cantilever arm. The release layer could be formed using a photo-resist material. The photo-resist material can be patterned by exposing the photo-resist material using multiple exposures. A first exposure could expose a portion of the photo-resist material, where the exposed portion has substantially vertical sides. A second exposure could give the exposed portion of the photo-resist material slanted sides. A wet etch could be performed to remove the release layer from under the cantilever arm.