The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Sep. 06, 2007
Seung Bum Hong, Seongnam-si, KR;
Yun Seok Kim, Seongnam-si, KR;
Kwang Soo NO, Seongnam-si, KR;
Sung Hoon Choa, Seoul, KR;
Simon Buehlmann, Yongin-si, KR;
Ji Yoon Kim, Yongin-si, KR;
Seung Bum Hong, Seongnam-si, KR;
Yun Seok Kim, Seongnam-si, KR;
Kwang Soo No, Seongnam-si, KR;
Sung Hoon Choa, Seoul, KR;
Simon Buehlmann, Yongin-si, KR;
Ji Yoon Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of recording bits on a ferroelectric medium using a scanning probe or a small conductive structure and a recording medium thereof, in which bit sizes can be decreased to increase data recording density as well as to reduce losses in reproduction signals. The method includes applying switching voltages to a lower electrode of the ferroelectric medium and the probe so as to write bits while approaching the probe to or bringing the probe into contact with a surface of the ferroelectric medium; and applying a base bias voltage, which is equal or smaller in magnitude and opposite in sign to the switching voltages between the switching voltages to make the probe equipotential with an upper portion of the record medium.