The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Mar. 14, 2006
Andrew Tye Hunt, Atlanta, GA (US);
Ioannis (John) Papapolymerou, Decatur, GA (US);
Todd A. Polley, Suwanee, GA (US);
Guoan Wang, Atlanta, GA (US);
Andrew Tye Hunt, Atlanta, GA (US);
Ioannis (John) Papapolymerou, Decatur, GA (US);
Todd A. Polley, Suwanee, GA (US);
Guoan Wang, Atlanta, GA (US);
nGimat Co., Atlanta, GA (US);
Abstract
The invention is a tunable RF MEMS switch developed with a BST dielectric at the contact interface. BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitive switches. The capacitive tunable RF MEMS switch with a BST dielectric is disclosed showing its characterization and properties up to 40 GHz.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile