The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Apr. 17, 2008
Christophe Detavenier, Gent, BE;
Simon Gaudet, Montreal, CA (US);
Christian Lavoie, Ossining, NY (US);
Conal E. Murray, Yorktown Heights, NY (US);
Christophe Detavenier, Gent, BE;
Simon Gaudet, Montreal, CA (US);
Christian Lavoie, Ossining, NY (US);
Conal E. Murray, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.