The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Mar. 20, 2008
Wen-yi Chen, Taipei, TW;
Ryan Hsin-chin Jiang, Taipei, TW;
Ming-dou Ker, Jhu-bei, TW;
Amazing Microelectronic Corp., Taipei County, TW;
Abstract
The present invention discloses a bidirectional PNPN silicon-controlled rectifier comprising: a p-type substrate; a N-type epitaxial layer; a P-type well and two N-type wells all formed inside the N-type epitaxial layer with the two N-type wells respectively arranged at two sides of the P-type well; a first semiconductor area, a second semiconductor area and a third semiconductor area all formed inside the P-type well and all coupled to an anode, wherein the second semiconductor area and the third semiconductor area are respectively arranged at two sides of the first semiconductor area, and wherein the first semiconductor area is of first conduction type, and the second semiconductor area and the third semiconductor area are of second conduction type; and two P-type doped areas respectively formed inside the N-type wells, wherein each P-type doped area has a fourth semiconductor area neighboring the P-type well and a fifth semiconductor area, and wherein both the fourth semiconductor area and the fifth semiconductor area are coupled to a cathode, and wherein the fourth semiconductor area is of second conduction type, and the fifth semiconductor area is of first conduction type.