The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Jul. 29, 2008
Jack O. Chu, Manhasset Hills, NY (US);
David R. Dimilia, Wappingers Falls, NY (US);
Lijuan Huang, Tarrytown, NY (US);
Jack O. Chu, Manhasset Hills, NY (US);
David R. DiMilia, Wappingers Falls, NY (US);
Lijuan Huang, Tarrytown, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial SiGelayers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed SiGe, and strained SiGedepending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained SiGeC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.