The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Sep. 18, 2007
Hyun-wook Lee, Seoul, KR;
Wan-goo Hwang, Gyeonggi-do, KR;
Bu-cheul Lee, Gyeonggi-do, KR;
Jeong-soo Suh, Seoul, KR;
Sung-il Han, Gyeonggi-do, KR;
Seong-ju Choi, Gyeonggi-do, KR;
Hyun-Wook Lee, Seoul, KR;
Wan-Goo Hwang, Gyeonggi-do, KR;
Bu-Cheul Lee, Gyeonggi-do, KR;
Jeong-Soo Suh, Seoul, KR;
Sung-Il Han, Gyeonggi-do, KR;
Seong-Ju Choi, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An apparatus and a method form a thin layer on each of multiple semiconductor substrates. A processing chamber of the apparatus includes a boat in which the semiconductor substrates are arranged in a vertical direction. A vaporizer vaporizes a liquid metal precursor into a metal precursor gas. A buffer receives a source gas from the vaporizer and increases a pressure of the source gas to higher than atmospheric pressure, the source gas including the metal precursor gas. A first supply pipe connects the buffer and the processing chamber, the first supply pipe including a first valve for controlling a mass flow rate of the source gas. A second supply pipe connects the vaporizer and a pump for creating a vacuum inside the processing chamber, the second supply pipe including a second valve for exhausting a dummy gas during an idling operation of the vaporizer.