The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Sep. 16, 2008
Applicants:
Heon Yong Chang, Gyeonggi-do, KR;
Sang Heon Kim, Seoul, KR;
Inventors:
Heon Yong Chang, Gyeonggi-do, KR;
Sang Heon Kim, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change memory device includes a silicon substrate having a phase change cell region. A plurality of phase change cell are formed in the phase change region of the silicon substrate. A contact comprising a first contact and a second contact is formed on each of the phase change cells. A plurality of bit lines are electrically connected to the contacts. A contact plug is formed on the silicon substrate in a region outside of the phase change cell region, and a word line is formed over the silicon substrate and is connected to the contact plug.