The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2010

Filed:

Dec. 14, 2005
Applicants:

Tae Wook Seo, Suwon-si, KR;

Young Hoon Park, Anseong-si, KR;

Ki Hoon Lee, Yongin-si, KR;

Sahng Kyoo Lee, Seoul, KR;

Inventors:

Tae Wook Seo, Suwon-si, KR;

Young Hoon Park, Anseong-si, KR;

Ki Hoon Lee, Yongin-si, KR;

Sahng Kyoo Lee, Seoul, KR;

Assignee:

IPS Ltd., Pyungtaek-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/06 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method is provided for depositing thin films in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited.


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