The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Sep. 30, 2003
Andrea Urban, Stuttgart, DE;
Franz Laermer, Weil der Stadt, DE;
Klaus Breitschwerdt, Filderstadt, DE;
Volker Becker, Marxzell, DE;
Andrea Urban, Stuttgart, DE;
Franz Laermer, Weil der Stadt, DE;
Klaus Breitschwerdt, Filderstadt, DE;
Volker Becker, Marxzell, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.