The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
May. 10, 2007
Chia-hua Ho, Hsinchu, TW;
Chia-Hua Ho, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A magnetic memory, a memory cell thereof, and a method of manufacturing the memory cell are provided. The memory cell of the magnetic memory includes a bottom contact layer, a bit line, a magnetic stack structure and a dielectric material. The bit line is disposed over the bottom contact layer. The magnetic stack structure is disposed between the bottom contact layer and the bit line. The dielectric material at least fills between the bottom contact layer and the bit line and surrounds the magnetic stack structure. A gap is formed between the dielectric material and the magnetic stack structure. During programming of the memory cell, the magnetic stack structure generates heat, and the gap delays heat loss.