The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Jul. 16, 2008
Hsiao Che Wu, Taoyuan County, TW;
Ming Yen LI, Kaohsiung County, TW;
Wen LI Tsai, Kaohsiung County, TW;
Bin Siang Tsai, Changhua County, TW;
Hsiao Che Wu, Taoyuan County, TW;
Ming Yen Li, Kaohsiung County, TW;
Wen Li Tsai, Kaohsiung County, TW;
Bin Siang Tsai, Changhua County, TW;
Promos Technologies Inc., Hsinchu, TW;
Abstract
A recessed channel transistor comprises a semiconductor substrate having a trench isolation structure, a gate structure having a lower block in the semiconductor substrate and an upper block on the semiconductor substrate, two doped regions positioned at two sides of the upper block and above the lower block, and an insulation spacer positioned at a sidewall of the upper block and having a bottom end sandwiched between the upper block and the doped regions. In particular, the two doped regions serves as the source and drain regions, respectively, and the lower block of the gate structure serves as the recessed gate of the recessed channel transistor.