The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2010

Filed:

Jun. 29, 2006
Applicants:

Phung T. Nguyen, Pleasant Valley, NY (US);

Robert C. Wong, Poughkeepsie, NY (US);

Inventors:

Phung T. Nguyen, Pleasant Valley, NY (US);

Robert C. Wong, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
Abstract

A one-transistor static random access memory (1T SRAM) device and circuit implementations are disclosed. The 1T SRAM device includes a planar field effect transistor (FET) on the surface of the cell and a vertical PNPN device integrated to one side of the FET. A base of the PNP of the PNPN device is electrically common to the emitter/collector of the FET and a base of the NPN of the PNPN device is electrically common to the channel region of the FET. The anode pin of the PNPN device may be used as a word line or a bit line. A method of forming the 1T SRAM device is also disclosed.


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