The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Apr. 07, 2004
Qingguo Wu, Tualatin, OR (US);
Haiying Fu, West Linn, OR (US);
Dong Niu, Tualatin, OR (US);
Ananda K. Bandyopadhyay, West Linn, OR (US);
David Mordo, Cupertino, CA (US);
Qingguo Wu, Tualatin, OR (US);
Haiying Fu, West Linn, OR (US);
Dong Niu, Tualatin, OR (US);
Ananda K. Bandyopadhyay, West Linn, OR (US);
David Mordo, Cupertino, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Methods of preparing a carbon doped oxide (CDO) layer of low dielectric constant and low residual stress involving, for instance, providing a substrate to a deposition chamber and exposing it to an organosilicon precursor containing unsaturated C—C bonds or to multiple organic precursors including at least one organosilicon and at least one unsaturated C—C bond are provided. The methods may also involve igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components with a high percentage of the low frequency component, and depositing the carbon doped dielectric layer under conditions in which the resulting dielectric layer has a residual stress of not greater than, e.g., about 50 MPa, and a dielectric constant not greater than about 3.