The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Dec. 04, 2003
Ja-hum Ku, Seongnam, KR;
Kwan-jong Roh, Anyang, KR;
Min-chul Sun, Suwon, KR;
Min-joo Kim, Seoul, KR;
Ja-Hum Ku, Seongnam, KR;
Kwan-Jong Roh, Anyang, KR;
Min-Chul Sun, Suwon, KR;
Min-Joo Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are exemplary methods for forming a nickel silicide layer and semiconductor devices incorporating a nickel silicide layer that provides increased stability for subsequent processing at temperatures above 450° C. In particular, the nickel silicide layer is formed from a nickel alloy having a minor portion of an alloying metal, such as tantalum, and exhibits reduced agglomeration and retarded the phase transition between NiSi and NiSito suppress increases in the sheet resistance and improve the utility for use with fine patterns. As formed, the nickel silicide layer includes both a lower layer consisting primarily of nickel and silicon and a thinner upper layer that incorporates the majority of the alloying metal.