The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Aug. 06, 2009
Kei Watanabe, Tokyo, JP;
Akifumi Gawase, Ibaraki, JP;
Kenichi Otsuka, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device according to one embodiment includes: forming an interlayer sacrificial film and an insulating film located thereon above a semiconductor substrate having a semiconductor element, the interlayer sacrificial film having a wiring provided therein; etching the insulating film, or, etching the insulating film and the interlayer sacrificial film to form a trench reaching the interlayer sacrificial film; forming a gas permeable film in the trench; gasifying and removing the interlayer sacrificial film through the trench and the gas permeable film; and forming a sealing film on the gas permeable film for sealing the vicinity of an opening of the trench after removing the interlayer sacrificial film.