The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Dec. 14, 2006
Takanori Matsumoto, Yokkaichi, JP;
Takanori Matsumoto, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device includes etching a silicon oxide film, a silicon nitride film, a polycrystalline silicone film, and a gate insulating film in a predetermined pattern including a first opening width corresponding to a first trench and a second opening width corresponding to a second trench, the second opening width being larger than the first opening width, and etching the semiconductor substrate to simultaneously form the first and second trenches so that a first depth of the first trench is equal to a second depth of the second trench, and a first angle between a first side surface and a first bottom surface of the first trench is smaller than a second angle between a second side surface and a second bottom surface of the second trench, and the first trench includes a curved portion at an upper portion of the first side surface.