The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2010

Filed:

Jan. 23, 2008
Applicants:

Hung-mine Tsai, Kaohsiung, TW;

Ching-nan Hsiao, Kaohsiung County, TW;

Chung-lin Huang, Tao-Yuan, TW;

Inventors:

Hung-Mine Tsai, Kaohsiung, TW;

Ching-Nan Hsiao, Kaohsiung County, TW;

Chung-Lin Huang, Tao-Yuan, TW;

Assignee:

Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a memory includes first providing a substrate with a horizontally adjacent control gate region and floating gate region which includes a sacrificial layer and sacrificial sidewalls, removing the sacrificial layer and sacrificial sidewalls to expose the substrate, forming dielectric sidewalls adjacent to the control gate region, forming a floating gate dielectric layer on the exposed substrate and forming a floating gate layer adjacent to the dielectric sidewalls and on the floating gate dielectric layer.


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