The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Jan. 14, 2009
Applicants:
Kyoung-woo Lee, Seoul, KR;
Ja-hum Ku, Gyeonggi-do, KR;
Seung-man Choi, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CMOS integrated circuit has NMOS and PMOS transistors therein and an insulating layer extending on the NMOS transistors. The insulating layer is provided to impart a relatively large tensile stress to the NMOS transistors. In particular, the insulating layer is formed to have a sufficiently high internal stress characteristic that imparts a tensile stress in a range from about 2 gigapascals (2 GPa) to about 4 gigapascals (4 GPa) in the channel regions of the NMOS transistors.