The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Apr. 24, 2009
Ryuji Tomita, Kanagawa, JP;
Yosuke Sugiyama, Sagamihara, JP;
Ryuji Tomita, Kanagawa, JP;
Yosuke Sugiyama, Sagamihara, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
In a semiconductor manufacturing method, a metal film is formed on a substrate and heat treated. The relationship between substrate warping and the heat treatment temperature during silicide formation is acquired (S). A silicide film is formed by forming a metal film on a substrate and heat treating, including substrate measurement during heat treatment (S). The relationship between substrate warping at heat treatment temperature is determined from the relationship between the warping of the substrate and the temperature for heat treatment and the temperature for heat treatment carried out on the substrate when the warping of the substrate is measured. The difference between found warping and the measured warping is calculated (S). Whether the difference exceeds a predetermined value is determined (S). If the difference exceeds a predetermined value, heat treatment conditions are adjusted (S), but they not adjusted if the difference is no greater than the predetermined value.