The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Jun. 06, 2005
Chen-an Chen, Milpitas, CA (US);
Avgerinos Gelatos, Redwood City, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Ming Xi, Milpitas, CA (US);
Mark M. Hytros, Lake In The Hills, IL (US);
Chen-An Chen, Milpitas, CA (US);
Avgerinos Gelatos, Redwood City, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Ming Xi, Milpitas, CA (US);
Mark M. Hytros, Lake In The Hills, IL (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.