The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jun. 25, 2007
Chiharu Ota, Tokyo, JP;
Johji Nishio, Machida, JP;
Tetsuo Hatakeyama, Yokohama, JP;
Takashi Shinohe, Yokosuka, JP;
Chiharu Ota, Tokyo, JP;
Johji Nishio, Machida, JP;
Tetsuo Hatakeyama, Yokohama, JP;
Takashi Shinohe, Yokosuka, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type having a top surface and a bottom surface, a semiconductor layer of a first conductivity type formed on the top surface of the semiconductor substrate, and having an active region and an edge termination region surrounding the active region, a first semiconductor region of a second conductivity type formed in the edge termination region adjacent to an edge of the active region, a second semiconductor region of a second conductivity type buried in the edge termination region in a sheet shape or a mesh shape substantially in parallel with a surface of the semiconductor layer, a first electrode formed on the active region of the semiconductor layer and a part of the first semiconductor region, and a second electrode formed on the bottom surface of the semiconductor substrate.