The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Oct. 31, 2008
Kazuhiro Tsukamoto, Tokyo, JP;
Kazuhiro Tsukamoto, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
There have been provided a semiconductor device capable of preventing defects associated with etching, such as an increase in leak current, deterioration in film-coating properties and deterioration in transistor properties, and a method for manufacturing the semiconductor device. A CMOS transistor includes, on the same semiconductor substrate, an NMOS transistor having a gate electrode and a PMOS transistor having a gate electrode, wherein the former gate electrode includes a gate insulating film, a polycrystal silicon layer, a metal layer and another polycrystal silicon layer, and the latter gate electrode includes a gate insulating film, a metal layer and a polycrystal silicon layer.