The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
May. 17, 2006
Yoshiyuki Ooba, Yokohama, JP;
Hitoshi Sakamoto, Yokohama, JP;
Yoshiyuki Ooba, Yokohama, JP;
Hitoshi Sakamoto, Yokohama, JP;
Canon Anelva Corporation, Kanagawa, JP;
Abstract
A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a memberto be etched, which is disposed within a chamberand is formed of a material containing an element capable of forming a compound with Si, while keeping the memberat a relatively high temperature, to form a gas of a precursor, which is a compound of the material and the halogen; holding a substrateaccommodated within the chamberat a relatively low temperature, with the Si interface of the substratebeing exposed, to adsorb the precursoronto the Si interface of the substrate; and then allowing the radical of the halogen gas to act on the precursoradsorbed onto the Si interface to reduce the precursor, thereby producing a compound of the material and Si.