The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Oct. 05, 2007
Zhiyuan YE, Cupertino, CA (US);
Saurabh Chopra, Sunnyvale, CA (US);
Andrew Lam, San Francisco, CA (US);
Yihwan Kim, Milpitas, CA (US);
Zhiyuan Ye, Cupertino, CA (US);
Saurabh Chopra, Sunnyvale, CA (US);
Andrew Lam, San Francisco, CA (US);
Yihwan Kim, Milpitas, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition.