The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Dec. 14, 2005
Fangyi Rao, San Jose, CA (US);
Dan Feng, Los Altos, CA (US);
Fangyi Rao, San Jose, CA (US);
Dan Feng, Los Altos, CA (US);
Cadence Design Systems, Inc., San Jose, CA (US);
Abstract
A pertubative approach based on the Born approximation resolves weakly nonlinear circuit models without requiring explicit high-order device derivatives. Convergence properties and the relation to Volterra series are discussed. According to the disclosed methods, second and third order intermodulation products (IM2, IM3) and intercept points (IP2, IP3) can be calculated by second and third order Born approximations under weakly nonlinear conditions. A diagrammatic representation of nonlinear interactions is presented. Using this diagrammatic technique, both Volterra series and Born approximations can be constructed in a systematic way. The method is generalized to calculate other high-order nonlinear effects such as IMn (nth order intermodulation product) and IPn (nth order intermodulation intercept point). In general, the equations are developed in harmonic form and can be implemented in both time and frequency domains for analog and RF circuits.