The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jul. 03, 2007
Kunliang Zhang, Milpitas, CA (US);
Min Zheng, Milpitas, CA (US);
Min LI, Dublin, CA (US);
Chen-jung Chien, Sunnyvale, CA (US);
Cherng-chyi Han, San Jose, CA (US);
Kunliang Zhang, Milpitas, CA (US);
Min Zheng, Milpitas, CA (US);
Min Li, Dublin, CA (US);
Chen-Jung Chien, Sunnyvale, CA (US);
Cherng-Chyi Han, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).